Very high gain and low noise GaAsSb/AlGaAsSb avalanche photodiodes for 1550nm detection at room temperature

Liu, Y. orcid.org/0000-0003-3034-9628, Jin, X. orcid.org/0000-0002-7205-3318, Lee, S. et al. (10 more authors) (2024) Very high gain and low noise GaAsSb/AlGaAsSb avalanche photodiodes for 1550nm detection at room temperature. In: Jiang, S. and Digonnet, M.J., (eds.) Optical Components and Materials XXI. Optical Components and Materials XXI, 27 Jan - 01 Feb 2024, San Francisco, California, United States. Society of Photo Optical Instrumentation Engineers (SPIE) ISBN 9781510670242

Abstract

Metadata

Item Type: Proceedings Paper
Authors/Creators:
Editors:
  • Jiang, S.
  • Digonnet, M.J.
Copyright, Publisher and Additional Information:

© 2024 Society of Photo Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, or modification of the contents of the publication are prohibited.

Keywords: Avalanche photodiode (APD); excess noise; avalanche multiplication; impact ionization; 1550 nm; AlGaAsSb
Dates:
  • Published: 8 March 2024
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > School of Electrical and Electronic Engineering
The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 17 Jan 2025 16:16
Last Modified: 17 Jan 2025 16:16
Status: Published
Publisher: Society of Photo Optical Instrumentation Engineers (SPIE)
Refereed: Yes
Identification Number: 10.1117/12.3011687
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Open Archives Initiative ID (OAI ID):

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