Sheikhan, A. orcid.org/0000-0002-2207-1593 and Narayanan, E.M.S. orcid.org/0000-0001-6832-1300 (2024) Characteristics of a 1200 V hybrid power switch comprising a Si IGBT and a SiC MOSFET. Micromachines, 15 (11). 1337. ISSN 2072-666X
Abstract
Hybrid Power Switches (HPS) combine the advantages of SiC unipolar and Si bipolar devices and therefore can bridge the gap between these technologies. In this paper, the performance of a hybrid power switch configuration based on the latest SiC MOSFET and Si IGBT technologies is presented. The device is evaluated through experimental measurements of its characteristics under various conditions. The results show the HPS can achieve switching losses as low as a SiC MOSFET while offering the high current capability of the IGBT without significant increase in costs.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2024 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
Keywords: | silicon carbide (SiC); silicon (Si); Hybrid Power Switch; IGBT; MOSFET |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) The University of Sheffield > Faculty of Engineering (Sheffield) > School of Electrical and Electronic Engineering |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 13 Nov 2024 16:29 |
Last Modified: | 13 Nov 2024 16:29 |
Status: | Published |
Publisher: | MDPI AG |
Refereed: | Yes |
Identification Number: | 10.3390/mi15111337 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:219503 |