Characteristics of a 1200 V hybrid power switch comprising a Si IGBT and a SiC MOSFET

Sheikhan, A. orcid.org/0000-0002-2207-1593 and Narayanan, E.M.S. orcid.org/0000-0001-6832-1300 (2024) Characteristics of a 1200 V hybrid power switch comprising a Si IGBT and a SiC MOSFET. Micromachines, 15 (11). 1337. ISSN 2072-666X

Abstract

Metadata

Item Type: Article
Authors/Creators:
Copyright, Publisher and Additional Information:

© 2024 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).

Keywords: silicon carbide (SiC); silicon (Si); Hybrid Power Switch; IGBT; MOSFET
Dates:
  • Published: November 2024
  • Published (online): 31 October 2024
  • Accepted: 29 October 2024
  • Submitted: 24 September 2024
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
The University of Sheffield > Faculty of Engineering (Sheffield) > School of Electrical and Electronic Engineering
Depositing User: Symplectic Sheffield
Date Deposited: 13 Nov 2024 16:29
Last Modified: 13 Nov 2024 16:29
Status: Published
Publisher: MDPI AG
Refereed: Yes
Identification Number: 10.3390/mi15111337
Open Archives Initiative ID (OAI ID):

Export

Statistics