Effects of rapid thermal annealing on telecom C-band InAs quantum dots on InP (100) grown by droplet epitaxy

We demonstrate the effects of rapid thermal annealing on emission from telecom C-band InAs/InP (100) quantum dots (QDs) grown by droplet epitaxy in metal–organic vapour phase epitaxy. Room temperature photoluminescence from the QD ensemble shows a tuned emission wavelength through the C-band and O-band while improving the emission intensity by ∼4.5 times at an annealing temperature of 770 °C. A blueshift of the QD emission up to 430 nm has been achieved. Low-temperature micro-photoluminescence demonstrates single QD emission from the annealed samples with an improvement in linewidth of up to 30%.