Jung, H. orcid.org/0000-0002-5250-4767, Lee, S. orcid.org/0000-0002-5669-1555, Jin, X. orcid.org/0000-0002-7205-3318 et al. (5 more authors) (2024) Low excess noise and high quantum efficiency avalanche photodiodes for beyond 2 µm wavelength detection. Communications Materials, 5 (1). 219. ISSN 2662-4443
Abstract
The rising concentration of greenhouse gases, especially methane and carbon dioxide, is driving global temperature increases and exacerbating the climate crisis. Monitoring these gases requires detectors that operate in the extended short-wavelength infrared range (~2.4 µm), covering methane (1.65 µm) and carbon dioxide (2.05 µm) wavelengths. Here, we present a high-performance linear mode avalanche photodetector (APD) with an InGaAs/GaAsSb type-II superlattice absorber and an AlGaAsSb multiplier, matched to InP substrates. This APD achieves a room temperature gain of 178, an external quantum efficiency of 3560% at 2 µm, low excess noise (less than 2 at gains below 20), and a small temperature coefficient of breakdown (7.58 mV/K·µm). These results indicate that a manufacturable semiconductor material-based APD could significantly advance high-sensitivity receivers for greenhouse gas monitoring, potentially enabling their commercial production and widespread use.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © The Author(s) 2024. This article is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License, which permits any non-commercial use, sharing, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if you modified the licensed material. You do not have permission under this licence to share adapted material derived from this article or parts of it. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/bync-nd/4.0/. |
Keywords: | Electrical and electronic engineering; Electronics, photonics and device physics |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > School of Electrical and Electronic Engineering |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 16 Oct 2024 08:18 |
Last Modified: | 16 Oct 2024 08:18 |
Status: | Published |
Publisher: | Springer Science and Business Media LLC |
Refereed: | Yes |
Identification Number: | 10.1038/s43246-024-00627-9 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:218394 |