Clustering in gallium ion beam sputtered compound materials driven by bond strength and interstitial/vacancy reaction

Ma, Z. orcid.org/0000-0003-2508-6499, Zhang, X., Liu, P. et al. (13 more authors) (2023) Clustering in gallium ion beam sputtered compound materials driven by bond strength and interstitial/vacancy reaction. Applied Physics Letters, 123 (10). 102101. ISSN 0003-6951

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Item Type: Article
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© 2023 The Authors. Except as otherwise noted, this author-accepted version of a journal article published in Applied Physics Letters is made available via the University of Sheffield Research Publications and Copyright Policy under the terms of the Creative Commons Attribution 4.0 International License (CC-BY 4.0), which permits unrestricted use, distribution and reproduction in any medium, provided the original work is properly cited. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/

Keywords: Doping; Plasmons; Free electron model; Focused ion beam; Valence electron energy loss spectroscopy; Alloys; Radiation damage; Nanoclusters; Chemical bonding; Regression analysis
Dates:
  • Published: 4 September 2023
  • Published (online): 5 September 2023
  • Accepted: 20 August 2023
  • Submitted: 11 June 2023
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 22 Jul 2024 15:07
Last Modified: 23 Jul 2024 13:29
Status: Published
Publisher: AIP Publishing
Refereed: Yes
Identification Number: 10.1063/5.0161681
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