Ma, Z. orcid.org/0000-0003-2508-6499, Zhang, X., Liu, P. et al. (13 more authors) (2023) Clustering in gallium ion beam sputtered compound materials driven by bond strength and interstitial/vacancy reaction. Applied Physics Letters, 123 (10). 102101. ISSN 0003-6951
Abstract
The investigation of chemical reactions during ion irradiation is a frontier for the study of the ion–material interaction. In order to probe the chemistry of ion produced nanoclusters, valence electron energy loss spectroscopy (VEELS) was exploited to investigate Ga+ ion damage in Al2O3, InP, and InGaAs, where each target material has been shown to react differently to the interaction between impinging ions, recoil atoms, and vacancies: metallic Ga, ternary InGaP clusters, and metallic In clusters are formed in Al2O3, InP, and InGaAs, respectively. Supporting simulations based on Monte Carlo and crystal orbital Hamiltonian calculations indicate that the chemical constitution of cascade induced nano-precipitates is a result of a competition between interstitial/vacancy consumption rates and preferential bond formation due to differing bond strengths.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2023 The Authors. Except as otherwise noted, this author-accepted version of a journal article published in Applied Physics Letters is made available via the University of Sheffield Research Publications and Copyright Policy under the terms of the Creative Commons Attribution 4.0 International License (CC-BY 4.0), which permits unrestricted use, distribution and reproduction in any medium, provided the original work is properly cited. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ |
Keywords: | Doping; Plasmons; Free electron model; Focused ion beam; Valence electron energy loss spectroscopy; Alloys; Radiation damage; Nanoclusters; Chemical bonding; Regression analysis |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 22 Jul 2024 15:07 |
Last Modified: | 23 Jul 2024 13:29 |
Status: | Published |
Publisher: | AIP Publishing |
Refereed: | Yes |
Identification Number: | 10.1063/5.0161681 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:215071 |