The evolution of indium precipitation in gallium focused ion beam prepared samples of InGaAs/InAlAs quantum wells under electron beam irradiation

Liu, S. orcid.org/0009-0008-5660-1063, Dong, J., Ma, Z. et al. (6 more authors) (2024) The evolution of indium precipitation in gallium focused ion beam prepared samples of InGaAs/InAlAs quantum wells under electron beam irradiation. Journal of Microscopy, 293 (3). pp. 169-176. ISSN 0022-2720

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Item Type: Article
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© 2023 The Authors. Except as otherwise noted, this author-accepted version of a journal article published in Microscopy of Semiconducting Materials is made available via the University of Sheffield Research Publications and Copyright Policy under the terms of the Creative Commons Attribution 4.0 International License (CC-BY 4.0), which permits unrestricted use, distribution and reproduction in any medium, provided the original work is properly cited. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/

Keywords: HAADF; In precipitation; InGaAs/InAlAs; QCL; STEM
Dates:
  • Published: March 2024
  • Published (online): 26 December 2023
  • Accepted: 11 December 2023
  • Submitted: 16 July 2023
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 22 Jul 2024 14:46
Last Modified: 23 Jul 2024 07:47
Status: Published
Publisher: Wiley
Refereed: Yes
Identification Number: 10.1111/jmi.13251
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