Mtunzi, M. orcid.org/0009-0000-3924-2726, Jia, H. orcid.org/0000-0002-8325-3948, Hou, Y. et al. (16 more authors) (2024) High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy. Journal of Physics D: Applied Physics, 57 (25). 255101. ISSN 0022-3727
Abstract
High-quality and low-defect-density germanium (Ge) buffer layers on silicon (Si) substrates have long been developed for group IV and III–V devices by suppressing defect propagation during epitaxial growth. This is a crucial step for the development of highly efficient photonic devices on Si substrates. Patterned silicon substrates have increasingly been employed for their ability to restrict and hinder the motion of defects. In this work, we demonstrate the effectiveness of an optimised two-step growth recipe structure on a (111)-faceted V-groove silicon substrate with a 350 nm flat ridge. This strategy successfully reduces the threading dislocation (TD) density while growing a 1 μm Ge buffer layer via molecular beam epitaxy. As a result, a high-quality buffer is produced with a low TD density on the order of 107 cm−2 and a surface roughness below 1 nm.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2024 The Author(s). Published by IOP Publishing Ltd. This is an open access article under the terms of the Creative Commons Attribution License (CC-BY 4.0), which permits unrestricted use, distribution and reproduction in any medium, provided the original work is properly cited. |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Chemical & Process Engineering (Leeds) |
Funding Information: | Funder Grant number EPSRC (Engineering and Physical Sciences Research Council) EP/W021080/1 EPSRC (Engineering and Physical Sciences Research Council) EP/V036432/1 |
Depositing User: | Symplectic Publications |
Date Deposited: | 04 Apr 2024 15:23 |
Last Modified: | 04 Apr 2024 15:23 |
Status: | Published |
Publisher: | IOP Publishing |
Identification Number: | 10.1088/1361-6463/ad31e0 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:211157 |
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Filename: Mtunzi_2024_J._Phys._D__Appl._Phys._57_255101.pdf
Licence: CC-BY 4.0