Growth of all-epitaxial Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si

Abstract

We explore epitaxial growth of Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si, where the Co2MnSi (CMS) is expected to be a half-metallic material for spintronics. By combining solid phase epitaxy, low-temperature molecular beam epitaxy, and atomic layer termination techniques, we can grow an epitaxial Ge layer on CMS at 250 °C, where the atomic interdiffusion between Ge and CMS is suppressed. After further optimization of the growth condition of the Ge intermediate layer, all-epitaxial CMS/Ge/CMS vertically stacked structures with spin-valve like magnetization reversal processes are demonstrated. This vertically stacked structures can be utilized for vertical spin-valve devices with a Ge channel on Si.

Metadata

Item Type:	Article
Authors/Creators:	Yamada, Atsuya Yamada, Michihiro Kusumoto, Shuhei do Nascimento, Julio A. Murrill, Connor Yamada, Shinya Sawano, Kentarou Lazarov, Vlado K. https://orcid.org/0000-0002-4314-6865 Hamaya, Kohei
Copyright, Publisher and Additional Information:	Funding Information: We acknowledge Prof. Y. Suzuki and Prof. Y. Niimi for lots of experimental supports. This work was supported by JST PRESTO (No. JPMJPR20BA ), JSPS KAKENHI (Grants No. 19H05616 and 21H05000) , JST CREST (Grant No. JPMJCR23A5 ), the Spintronics Research Network of Japan (Spin-RNJ) , and MEXT , X-NICS (Grant No. JPJ011438 ). A. Yamada acknowledges JSPS Research Fellowship for Young Scientists (Grant No. 23KJ1446 ) and the Program for Leading Graduate Schools: “Interactive Materials Science Cadet Program” . This is an author-produced version of the published paper. Uploaded in accordance with the University’s Research Publications and Open Access policy. Publisher Copyright: © 2024
Keywords:	CoMnSi,Ge,Spintronics,Vertical spin-valve device
Dates:	Published: 1 April 2024 Published (online): 20 January 2024 Accepted: 12 January 2024
Institution:	The University of York
Academic Units:	The University of York > Faculty of Sciences (York) > Chemistry (York) The University of York > Faculty of Sciences (York) > Physics (York)
Depositing User:	Pure (York)
Date Deposited:	16 Feb 2024 09:00
Last Modified:	14 Jan 2025 00:21
Published Version:	https://doi.org/10.1016/j.mssp.2024.108140
Status:	Published
Refereed:	Yes
Identification Number:	10.1016/j.mssp.2024.108140
Related URLs:	http://www.scopus.com/inward/record.url?...
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:209258

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Description: Growth of all-epitaxial Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si

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Growth of all-epitaxial Co2MnSi/Ge/Co2MnSi vertical spin-valve structures on Si

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