Khamtawi, R., Saenphum, N., Chantrell, R. W. orcid.org/0000-0001-5410-5615 et al. (2 more authors) (2024) Heusler-alloy-based magnetoresistive sensor with synthetic antiferromagnet. Journal of Physics D: Applied Physics. 135001. ISSN 0022-3727
Abstract
Heusler alloy has been widely utilized in magnetoresistive sensors to enhance the device performance. In this work, we theoretically investigate the performance of Heusler-alloy-based magnetoresistive sensors with a synthetic antiferromagnet (SAF) layer. The atomistic model combined with the spin accumulation model will be used in this work. The former is used to construct the reader stack and investigate the magnetization dynamics in the system. The latter is employed to describe the spin transport behavior at any position of the structure. We first perform simulations of the exchange bias (EB) phenomenon in the IrMn/Co2FeSi (CFS) system providing a high EB field. Then, a realistic reader stack of IrMn/CFS/Ru/CFS/Ag/CFS is constructed via an atomistic model. Subsequently, the resistance-area product (RA) and magnetoresistance (MR) ratio of the reader can be calculated by using the spin accumulation model. As a result of the spin transport behavior in the Heusler-alloy-based reader stack including SAF structure at 0 K, an enhancement of the MR ratio up to 120% and RA < 40 mΩ · µm2 can be observed. This study demonstrates the important role of the Heusler alloy and SAF layer in the development of magnetoresistive sensors for the application of readers in hard disk drives with an areal density beyond 2 Tb in−2.
Metadata
Item Type: | Article |
---|---|
Authors/Creators: |
|
Copyright, Publisher and Additional Information: | Funding Information: P C and J C gratefully acknowledge the support from Mahasarakham University and the National Research Council of Thailand (NRCT) under Grant No. NRCT5-RSA63014-01. R K would like to acknowledge the PhD scholarship from Seagate Technology (Thailand). Publisher Copyright: © 2023 The Author(s). Published by IOP Publishing Ltd. |
Keywords: | atomistic model,Heusler alloy,magnetoresistive sensor,spin accumulation model |
Dates: |
|
Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Physics (York) |
Depositing User: | Pure (York) |
Date Deposited: | 05 Feb 2024 09:40 |
Last Modified: | 10 Jan 2025 00:10 |
Published Version: | https://doi.org/10.1088/1361-6463/ad1728 |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1088/1361-6463/ad1728 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:208692 |
Download
Filename: Khamtawi_2024_J._Phys._D_Appl._Phys._57_135001.pdf
Description: Khamtawi_2024_J._Phys._D__Appl._Phys._57_135001
Licence: CC-BY 2.5