Effect of SiO2 surface passivation on the performance of GaN polarization superjunction heterojunction field effect transistors

Du, Y., Madathil, S.N.E. orcid.org/0000-0001-6832-1300, Kawai, H. et al. (2 more authors) (2024) Effect of SiO2 surface passivation on the performance of GaN polarization superjunction heterojunction field effect transistors. physica status solidi (a), 221 (4). 2300199. ISSN 1862-6300

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Item Type: Article
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© 2023 The Authors. This is an open access article under the terms of the Creative Commons Attribution-NonCommercial-NoDerivs License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non-commercial and no modifications or adaptations are made. https://creativecommons.org/licenses/by-nc-nd/4.0/

Keywords: GaN; heterojunction field effect transistors; polarizations; superjunctions; surface passivations
Dates:
  • Published: February 2024
  • Published (online): 27 December 2023
  • Submitted: 16 March 2023
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 05 Jan 2024 15:45
Last Modified: 01 Nov 2024 16:26
Status: Published
Publisher: Wiley
Refereed: Yes
Identification Number: 10.1002/pssa.202300199
Open Archives Initiative ID (OAI ID):

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