Du, Y., Madathil, S.N.E. orcid.org/0000-0001-6832-1300, Kawai, H. et al. (2 more authors) (2024) Effect of SiO2 surface passivation on the performance of GaN polarization superjunction heterojunction field effect transistors. physica status solidi (a), 221 (4). 2300199. ISSN 1862-6300
Abstract
In this article, the effects of the SiO2 surface passivation layer are reported on normally-on 1.2 kV GaN polarization superjunction (PSJ) heterojunction field effect transistors (HFETs) by comparing the electrical performances of PSJ HFETs with and without SiO2 surface passivation. A slight recovery of the 2D electron gas sheet density is observed in the slight negative shift of Vth after SiO2 surface passivation. Passivation also increases the breakdown voltage. This improvement may result from removing positive surface charges in defects along the P-GaN gate sidewall and top u-GaN layer after the specifically designed SiO2 surface passivation. Furthermore, the SiO2 surface passivation can also effectively suppress the surface gate leakage currents in the PSJ HFETs by eliminating the conductive channel created by the positive surface charges in defects.
Metadata
Item Type: | Article |
---|---|
Authors/Creators: |
|
Copyright, Publisher and Additional Information: | © 2023 The Authors. This is an open access article under the terms of the Creative Commons Attribution-NonCommercial-NoDerivs License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non-commercial and no modifications or adaptations are made. https://creativecommons.org/licenses/by-nc-nd/4.0/ |
Keywords: | GaN; heterojunction field effect transistors; polarizations; superjunctions; surface passivations |
Dates: |
|
Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 05 Jan 2024 15:45 |
Last Modified: | 01 Nov 2024 16:26 |
Status: | Published |
Publisher: | Wiley |
Refereed: | Yes |
Identification Number: | 10.1002/pssa.202300199 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:207128 |