Almutairi, F. orcid.org/0009-0001-3168-6776, Alotaibi, M. orcid.org/0000-0003-1322-6992 and West, A.R. orcid.org/0000-0002-5492-2102 (2023) Metal-insulator transition and resistive switching in Y-doped CeO2 ceramics. Physical Chemistry Chemical Physics, 25 (48). pp. 33056-33063. ISSN 1463-9076
Abstract
Y-doped ceria, Y0.16Ce0.84O1.92, is an oxide ion conductor that shows n-type conductivity under a small applied voltage. With increasing voltage, resistive switching by 2–3 orders of magnitude occurs that is reversible with some hysteresis and is enhanced in atmospheres of reduced pO2. The switching is a bulk effect, is not associated with Schottky barriers or with a crystallographic transition, occurs rapidly after a premonitory onset period depending on conditions and shows characteristics of a Mott transition. This is the third known example of low field-induced resistive switching in a bulk ceramic and represents an emergent phenomenon in materials that are taken outside their zone of thermodynamic stability.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2023 The Authors. This is an Open Access article distributed under the terms of the Creative Commons Attribution Licence (https://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Materials Science and Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 08 Dec 2023 10:28 |
Last Modified: | 01 Nov 2024 14:14 |
Status: | Published |
Publisher: | Royal Society of Chemistry (RSC) |
Refereed: | Yes |
Identification Number: | 10.1039/d3cp03562j |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:206178 |