Jin, X. orcid.org/0000-0002-7205-3318, Lewis, H.I.J., Yi, X. orcid.org/0000-0003-0177-2398 et al. (6 more authors) (2023) Very low excess noise Al0.75Ga0.25As0.56Sb0.44 avalanche photodiode. Optics Express, 31 (20). pp. 33141-33149. ISSN 1094-4087
Abstract
AlxGa1-xAsySb1-y grown lattice-matched to InP has attracted significant research interest as a material for low noise, high sensitivity avalanche photodiodes (APDs) due to its very dissimilar electron and hole ionization coefficients, especially at low electric fields. All work reported to date has been on Al concentrations of x = 0.85 or higher. This work demonstrates that much lower excess noise (F = 2.4) at a very high multiplication of 90 can be obtained in thick Al0.75Ga0.25As0.56Sb0.44 grown on InP substrates. This is the lowest excess noise that has been reported in any III-V APD operating at room temperature. The impact ionization coefficients for both electrons and holes are determined over a wide electric field range (up to 650 kV/cm) from avalanche multiplication measurements undertaken on complementary p-i-n and n-i-p diode structures. While these ionization coefficients can fit the experimental multiplication over three orders of magnitude, the measured excess noise is significantly lower than that expected from the β/α ratio and the conventional local McIntyre noise theory. These results are of importance not just for the design of APDs but other high field devices, such as transistors using this material.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | Journal © 2023. This is an Open Access article distributed under the terms of the Creative Commons Attribution Licence (https://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 28 Nov 2023 14:32 |
Last Modified: | 28 Nov 2023 14:32 |
Published Version: | http://dx.doi.org/10.1364/oe.500169 |
Status: | Published |
Publisher: | Optica Publishing Group |
Refereed: | Yes |
Identification Number: | 10.1364/oe.500169 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:205783 |