Anomalous luminescence temperature dependence of (In,Ga)(As,Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications

Sala, D.E.M. orcid.org/0000-0001-8116-8830 and Klenovsky, P. orcid.org/0000-0003-1914-164X (2023) Anomalous luminescence temperature dependence of (In,Ga)(As,Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications. New Journal of Physics, 25. 113012. ISSN 1367-2630

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Item Type: Article
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© 2023 The Author(s). Published by IOP Publishing Ltd on behalf of the Institute of Physics and Deutsche Physikalische Gesellschaft. Original Content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. https://creativecommons.org/licenses/by/4.0/

Keywords: quantum dot; nanomemory; photoluminescence; k · p method; configuration interaction; antimonides
Dates:
  • Published: November 2023
  • Published (online): 10 November 2023
  • Accepted: 31 October 2023
  • Submitted: 9 September 2023
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 14 Nov 2023 11:26
Last Modified: 14 Nov 2023 11:26
Status: Published
Publisher: IOP Publishing
Refereed: Yes
Identification Number: 10.1088/1367-2630/ad0856
Open Archives Initiative ID (OAI ID):

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