Metal-induced trap states: the roles of interface and border traps in HfO2/InGaAs

Do, H.-B. orcid.org/0000-0003-3274-5050, Luc, Q.-H., Pham, P.V. et al. (4 more authors) (2023) Metal-induced trap states: the roles of interface and border traps in HfO2/InGaAs. Micromachines, 14 (8). 1606. ISSN 2072-666X

Abstract

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Item Type: Article
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© 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).

Keywords: Hf 4f peaks; acceptor-like and donor-like traps; border traps; defects in HfO2; electronic band structure; interface traps; valence band maximum
Dates:
  • Published: August 2023
  • Published (online): 15 August 2023
  • Accepted: 11 August 2023
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 14 Sep 2023 08:11
Last Modified: 15 Sep 2023 11:02
Status: Published
Publisher: MDPI AG
Refereed: Yes
Identification Number: 10.3390/mi14081606
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