Threshold and power of pulsed red‐emitting diode lasers with a bulk active layer near p‐cladding under high‐temperature operation

Ryvkin, B. S. and Avrutin, Evgeny orcid.org/0000-0001-5488-3222 (2023) Threshold and power of pulsed red‐emitting diode lasers with a bulk active layer near p‐cladding under high‐temperature operation. Optical and quantum electronics. 640. pp. 639-640. ISSN 0306-8919

Abstract

Metadata

Item Type: Article
Authors/Creators:
Copyright, Publisher and Additional Information:

© The Author(s) 2023

Keywords: Semiconductor lasers,AlGaInP,Double heterostructure,Electron leakage,Internal efciency
Dates:
  • Published: 23 May 2023
  • Accepted: 25 April 2023
Institution: The University of York
Academic Units: The University of York > Faculty of Sciences (York) > Electronic Engineering (York)
Depositing User: Pure (York)
Date Deposited: 19 Jul 2023 15:10
Last Modified: 27 Dec 2024 00:24
Published Version: https://doi.org/10.1007/s11082-023-04887-6
Status: Published
Refereed: Yes
Identification Number: 10.1007/s11082-023-04887-6
Open Archives Initiative ID (OAI ID):

Download

Filename: s11082_023_04887_6.pdf

Description: s11082-023-04887-6

Licence: CC-BY 2.5

Export

Statistics