Ryvkin, B. S. and Avrutin, Evgeny orcid.org/0000-0001-5488-3222 (2023) Threshold and power of pulsed red‐emitting diode lasers with a bulk active layer near p‐cladding under high‐temperature operation. Optical and quantum electronics. 640. pp. 639-640. ISSN 0306-8919
Abstract
Threshold properties and pulsed output of AlGaInP visible-emitting lasers with an asymmetric waveguide structure and a bulk active layer are analysed. The efects of the current leakage, increased by the heating of the laser due to the proximity of the electrical pulse source and the Joule heating in and around this source are analysed. When optimising the laser design, waveguiding properties of the bulk active layer are shown to be important, leading to threshold currents decreasing, and injection efciency increasing, with active layer thickness in lasers with moderately thick (<0.1 μm) active layers.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © The Author(s) 2023 |
Keywords: | Semiconductor lasers,AlGaInP,Double heterostructure,Electron leakage,Internal efciency |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Electronic Engineering (York) |
Depositing User: | Pure (York) |
Date Deposited: | 19 Jul 2023 15:10 |
Last Modified: | 27 Dec 2024 00:24 |
Published Version: | https://doi.org/10.1007/s11082-023-04887-6 |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1007/s11082-023-04887-6 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:201712 |