Sheikhan, A. orcid.org/0000-0002-2207-1593, Madathil, S.N.E., Kawai, H. et al. (2 more authors) (2023) Evaluation of turn-off dV/dt controllability and switching characteristics of 1.2 kV GaN polarisation superjunction heterostructure field-effect transistors. Japanese Journal of Applied Physics, 62. 064502. ISSN 0021-4922
Abstract
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REGULAR PAPER • THE FOLLOWING ARTICLE ISOPEN ACCESS Evaluation of turn-off dV/dt controllability and switching characteristics of 1.2 kV GaN polarisation superjunction heterostructure field-effect transistors Alireza Sheikhan1, Sankara Narayanan Ekkanath Madathil1, Hiroji Kawai2, Shuichi Yagi2 and Hironobu Narui2
Published 5 July 2023 • © 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd Japanese Journal of Applied Physics, Volume 62, Number 6 Citation Alireza Sheikhan et al 2023 Jpn. J. Appl. Phys. 62 064502 DOI 10.35848/1347-4065/acd975 DownloadArticle PDF Figures References Download PDF 290 Total downloads Turn on MathJax Share this article
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Author affiliations 1 Department of Electronic and Electrical Engineering, The University of Sheffield, Sheffield, United Kingdom
2 Powdec K.K. Oyama, Tochigi, Japan
ORCID iDs Alireza Sheikhan https://orcid.org/0000-0002-2207-1593
Dates Received 16 April 2023 Revised 18 May 2023 Accepted 26 May 2023 Published 5 July 2023 Check for updates using Crossmark
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Journal RSS Sign up for new issue notifications Create citation alert Abstract Gallium nitride (GaN) devices inherently offer many advantages over silicon power devices, including a higher operating frequency, lower on-state resistance and higher operating temperature capabilities, which can enable higher power density and more efficient power electronics. Turn-off dV/dt controllability plays a key role in determining common-mode voltage in electrical drives and traction inverter applications. The fast-switching edges of GaN can introduce challenges such as electromagnetic interference, premature insulation failure and high overshoot voltages. In this paper, the device working principle, characteristics and dV/dt controllability of 1.2 kV GaN polarisation superjunction (PSJ) heterostructure FETs (HFETs) are presented. The effect of gate driving parameters and load conditions on turn-off dV/dt are investigated. It is shown that in PSJ HFETs the dV/dt can be effectively controlled to as low as 1 kV μs−1 by controlling the gate, with a minimum increase in switching losses. These results are highly encouraging for the application of the devices in motor drives.
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Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd. Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI (https://creativecommons.org/licenses/by/4.0/). |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 11 Jul 2023 15:25 |
Last Modified: | 11 Jul 2023 15:35 |
Published Version: | http://dx.doi.org/10.35848/1347-4065/acd975 |
Status: | Published |
Publisher: | IOP Publishing |
Refereed: | Yes |
Identification Number: | 10.35848/1347-4065/acd975 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:201375 |
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