Concepción, O, Søgaard, NB, Bae, J-H et al. (7 more authors) (2023) Isothermal Heteroepitaxy of Ge₁–ₓSnₓ Structures for Electronic and Photonic Applications. ACS Applied Electronic Materials, 5 (4). pp. 2268-2275. ISSN 2637-6113
Abstract
Epitaxy of semiconductor-based quantum well structures is a challenging task since it requires precise control of the deposition at the submonolayer scale. In the case of Ge1–xSnx alloys, the growth is particularly demanding since the lattice strain and the process temperature greatly impact the composition of the epitaxial layers. In this paper, the realization of high-quality pseudomorphic Ge1–xSnx layers with Sn content ranging from 6 at. % up to 15 at. % using isothermal processes in an industry-compatible reduced-pressure chemical vapor deposition reactor is presented. The epitaxy of Ge1–xSnx layers has been optimized for a standard process offering a high Sn concentration at a large process window. By varying the N2 carrier gas flow, isothermal heterostructure designs suitable for quantum transport and spintronic devices are obtained.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2023 The Authors. This is an open access article under the terms of the Creative Commons Attribution License (CC-BY 4.0), which permits unrestricted use, distribution and reproduction in any medium, provided the original work is properly cited. |
Keywords: | GeSn alloy, chemical vapor deposition, isothermal heterostructures, epitaxial growth, optoelectronic applications |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 26 Apr 2023 10:56 |
Last Modified: | 09 Jun 2023 10:46 |
Status: | Published |
Publisher: | American Chemical Society |
Identification Number: | 10.1021/acsaelm.3c00112 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:198613 |