Chen, C. orcid.org/0000-0001-7251-2580, Holmes, S.N. orcid.org/0000-0002-3221-5124, Farrer, I. orcid.org/0000-0002-3033-4306 et al. (2 more authors) (2020) Suspended two-dimensional electron gases in In0.75Ga0.25As quantum wells. Applied Physics Letters, 116 (23). 232106. ISSN 0003-6951
Abstract
We demonstrate that In0.75Ga0.25 As quantum wells can be freely suspended without losing electrical quality when the epitaxial strain-relieving buffer layer is removed. In applied magnetic fields, non-dissipative behavior is observed in the conductivity, and a current induced breakdown of the quantum Hall effect shows a lower critical current in the suspended layers due to efficient thermal isolation compared to the non-suspended-control device. Beyond the critical current, background impurity scattering in the suspended two-dimensional channel regions dominates with stochastic, resonant-like features in the conductivity. This device fabrication scheme offers the potential for thermally isolated devices containing suspension-asymmetry-induced, high spin–orbit coupling strengths with reduced electron–phonon interaction behavior but without introducing high levels of disorder in the processing.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2020 Author(s). Reproduced in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 11 Apr 2023 11:15 |
Last Modified: | 11 Apr 2023 11:15 |
Status: | Published |
Publisher: | AIP Publishing |
Refereed: | Yes |
Identification Number: | 10.1063/5.0013902 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:198068 |