Collins, X., White, B., Cao, Y. orcid.org/0000-0002-6353-7660 et al. (4 more authors) (2022) Low-noise AlGaAsSb avalanche photodiodes for 1550nm light detection. In: Jiang, S. and Digonnet, M.J.F., (eds.) Optical Components and Materials XIX. Optical Components and Materials XIX, 22 Jan - 28 Feb 2022, San Francisco, California, United States. Proceedings of SPIE, 11997 . Society of Photo-optical Instrumentation Engineers (SPIE) , p. 1199709. ISBN 9781510648654
Abstract
The optical detector used in pulsed LIDAR, range finding and optical time domain reflectometry systems is typically the limiting factor in the system's sensitivity. It is well-known that an avalanche photodiode (APD) can be used to improve the signal to noise ratio over a PIN detector, however, APDs operating at the eye-safe wavelengths around 1550 nm are limited in sensitivity by high excess noise. The underlying issue is that the impact ionization coefficient of InAlAs and InP used as the avalanche region in current commercial APDs are very similar at high gain, leading to poor excess noise performance. Recently, we have demonstrated extremely low noise from an Al(Ga)AsSb PIN diode with highly dissimilar impact ionization coefficients due to electron dominated impact ionization. In this paper, we report on the first low noise InGaAs/AlGaAsSb separate absorption, grading and multiplication APDs operating at 1550 nm with extremely low excess noise factor of 1.93 at a gain of 10 and 2.94 at a gain of 20. Furthermore, the APD's dark current density was measured to be 74.6 μA/cm2 at a gain of 10 which is competitive with commercial devices. We discuss the impact of the excess noise, dark current and responsivity on the APDs sensitivity and, project a noise-equivalent power (NEP) below 80 fW/Hz0.5 from a 230 μm diameter APD and commercial transimpedance amplifier (TIA). The prospects for the next generation of extremely low noise APDs for 1550 nm light detection are discussed.
Metadata
Item Type: | Proceedings Paper |
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Authors/Creators: |
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Editors: |
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Copyright, Publisher and Additional Information: | © 2022 Society of Photo Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, or modification of the contents of the publication are prohibited. |
Keywords: | AlGaAsSb; avalanche photodiode; excess noise; photodetector; NIR; LIDAR; impact ionization |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number PHLUX TECHNOLOGY LTD UNSPECIFIED |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 31 Mar 2023 16:52 |
Last Modified: | 31 Mar 2023 16:52 |
Status: | Published |
Publisher: | Society of Photo-optical Instrumentation Engineers (SPIE) |
Series Name: | Proceedings of SPIE |
Refereed: | Yes |
Identification Number: | 10.1117/12.2608842 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:197832 |