Satchell, N orcid.org/0000-0003-1597-2489, Shepley, P orcid.org/0000-0003-1240-593X and Burnell, G orcid.org/0000-0002-9486-0639 (2023) Sputtered niobium: Epitaxial thin film growth on a-plane sapphire. Report. University of Leeds
Abstract
This application note describes the growth of epitaxial Nb thin films by sputtering onto single crystal sub strates at high temperature in the Royce Deposition System. For sputter deposition onto a-plane sapphire substrates at 800◦C, a 65 nm Nb film shows strong bcc 110 structural ordering and a residual resistivity ratio of 30, consistent with an epitaxial microstructure. The sample has a superconducting Tc of 8.986 K. Epitaxial Nb has important applications for superconducting electronics, quantum technologies, and as a template for the epitaxial growth of further overlayers.
Metadata
Item Type: | Monograph |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © University of Leeds (2023). This work is licenced under Creative Commons (CC-BY 4.0) |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Physics and Astronomy (Leeds) > Condensed Matter (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 07 Mar 2023 15:37 |
Last Modified: | 07 Mar 2023 15:41 |
Status: | Published |
Publisher: | University of Leeds |
Identification Number: | 10.48785/100/149 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:197109 |