Tensile strained direct bandgap GeSn microbridges enabled in GeSn-on-insulator substrates with residual tensile strain

Burt, D, Zhang, L, Jung, Y et al. (8 more authors) (2023) Tensile strained direct bandgap GeSn microbridges enabled in GeSn-on-insulator substrates with residual tensile strain. Optics Letters, 48 (3). pp. 735-738. ISSN 0146-9592

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Item Type: Article
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© 2023 Optica Publishing Group. This is an author produced version of an article published in Optics Letters. Uploaded in accordance with the publisher's self-archiving policy.

Dates:
  • Published: 1 February 2023
  • Published (online): 26 January 2023
  • Accepted: 15 December 2022
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 01 Feb 2023 16:16
Last Modified: 26 Jan 2024 01:13
Published Version: http://dx.doi.org/10.1364/ol.476517
Status: Published
Publisher: Optica Publishing Group
Identification Number: 10.1364/ol.476517
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