Analysis of 1.2kV GaN polarisation superjunction diode surge current capability

Sheikhan, A., Narayanankutty, G., Madathil, S. orcid.org/0000-0001-6832-1300 et al. (3 more authors) (2023) Analysis of 1.2kV GaN polarisation superjunction diode surge current capability. Japanese Journal of Applied Physics, 62 (1). 014501. ISSN 0021-4922

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Item Type: Article
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© 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd. Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license (https://creativecommons.org/licenses/by/4.0/). Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.

Keywords: GaN Polarisation Super Junction; Schottky Barrier Diode; Surge Current Capability
Dates:
  • Published: January 2023
  • Published (online): 9 January 2023
  • Accepted: 1 December 2022
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 08 Dec 2022 13:12
Last Modified: 06 Feb 2023 12:55
Status: Published
Publisher: Japan Society of Applied Physics
Refereed: Yes
Identification Number: 10.35848/1347-4065/aca853
Open Archives Initiative ID (OAI ID):

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