Sheikhan, A., Narayanankutty, G., Madathil, S. orcid.org/0000-0001-6832-1300 et al. (3 more authors) (2023) Analysis of 1.2kV GaN polarisation superjunction diode surge current capability. Japanese Journal of Applied Physics, 62 (1). 014501. ISSN 0021-4922
Abstract
Surge current capability of power diodes is one of the essential parameters that needs to be considered for high power density operations in power electronic applications. Gallium Nitride (GaN) is emerging as the next generation of power semiconductor devices due to its superior material characteristics. This work presents the device working principle, characteristics, and the surge capability of 1200V GaN polarisation superjunction (PSJ) hybrid diodes. The experimental results show that the GaN PSJ diode can withstand a surge current of 60A which is around 8 times its rated current and a surge energy of 5.4J. Additionally, despite having a merged PiN and Schottky structure, no bipolar current flow due to the activation of p-doped GaN can be observed until breakdown. This can also be confirmed through the device forward characteristic which shows a unique saturation behaviour at about 76A without any bipolar region.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd. Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license (https://creativecommons.org/licenses/by/4.0/). Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. |
Keywords: | GaN Polarisation Super Junction; Schottky Barrier Diode; Surge Current Capability |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 08 Dec 2022 13:12 |
Last Modified: | 06 Feb 2023 12:55 |
Status: | Published |
Publisher: | Japan Society of Applied Physics |
Refereed: | Yes |
Identification Number: | 10.35848/1347-4065/aca853 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:194191 |
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Licence: CC-BY 4.0