Advanced transmission electron microscopy investigation of defect formation in movpe-growth of gap on silicon using arsenic initial coverage

Navarro, A, García-Tabarés, E, Ramasse, QM orcid.org/0000-0001-7466-2283 et al. (3 more authors) (2023) Advanced transmission electron microscopy investigation of defect formation in movpe-growth of gap on silicon using arsenic initial coverage. Applied Surface Science, 610. 155578. ISSN 0169-4332

Abstract

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Item Type: Article
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© 2022 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/bync-nd/4.0/).

Keywords: III-V; Silicon; GaP; Stacking faults; Interface; MOVPE; AsH3; HRTEM; STEM; EELS
Dates:
  • Published: 1 February 2023
  • Published (online): 8 November 2022
  • Accepted: 1 November 2022
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Chemical & Process Engineering (Leeds)
Funding Information:
Funder
Grant number
EPSRC (Engineering and Physical Sciences Research Council)
EP/W021080/1
Depositing User: Symplectic Publications
Date Deposited: 20 Dec 2022 15:52
Last Modified: 20 Dec 2022 15:52
Published Version: http://dx.doi.org/10.1016/j.apsusc.2022.155578
Status: Published
Publisher: Elsevier BV
Identification Number: 10.1016/j.apsusc.2022.155578
Open Archives Initiative ID (OAI ID):

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