Califano, M orcid.org/0000-0003-3199-3896, Lu, R and Zhou, Y (2021) Indirect to Direct Band Gap Transformation by Surface Engineering in Semiconductor Nanostructures. ACS Nano, 15 (12). pp. 20181-20191. ISSN 1936-0851
Abstract
Indirect band gap semiconductor materials are routinely exploited in photonics, optoelectronics, and energy harvesting. However, their optical conversion efficiency is low, due to their poor optical properties, and a wide range of strategies, generally involving doping or alloying, has been explored to increase it, often, however, at the cost of changing their material properties and their band gap energy, which, in essence, amounts to changing them into different materials altogether. A key challenge is therefore to identify effective strategies to substantially enhance optical transitions at the band gap in these materials without sacrificing their intrinsic nature. Here, we show that this is indeed possible and that GaP can be transformed into a direct gap material by simple nanostructuring and surface engineering, while fully preserving its “identity”. We then distill the main ingredients of this procedure into a general recipe applicable to any indirect material and test it on AlAs, obtaining an increase of over 4 orders of magnitude in both emission intensity and radiative rates.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2021 American Chemical Society. This is an author produced version of an article, published in ACS Nano. Uploaded in accordance with the publisher's self-archiving policy. |
Keywords: | : nanocrystals, indirect materials, GaP, AlAs, pseudopotential method, k-vector analysis, indirect-to-direct transitions |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 13 Dec 2022 16:46 |
Last Modified: | 13 Dec 2022 16:46 |
Status: | Published |
Publisher: | American Chemical Society |
Identification Number: | 10.1021/acsnano.1c08176 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:193981 |