Experimental Demonstration of a 1.2-kV Trench Clustered Insulated Gate Bipolar Transistor in Field-Stop Technology

Luo, P., Madathil, S.N.E. orcid.org/0000-0001-6832-1300 and de Souza, P. (2021) Experimental Demonstration of a 1.2-kV Trench Clustered Insulated Gate Bipolar Transistor in Field-Stop Technology. In: Proceedings of 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia). 2021 IEEE 12th Energy Conversion Congress & Exposition - Asia (ECCE-Asia), 24-27 May 2021, Singapore, Singapore. IEEE , pp. 1319-1324. ISBN 9781728163451

Abstract

In this paper a 1.2 kV, 50 A trench clustered IGBT is experimentally demonstrated in field-stop technology for the first time. Due to the optimized field stop layer design, the off-state leakage current is lower than 1 mA at 175°C. A low on-state voltage drop of 1.6 V is achieved at 150°C. The saturation current levels are effectively controlled by the self-clamping feature. Moreover, experimental results confirm that the fabricated devices exhibit dynamic avalanche-free switching performance as well as high dV/dt controllability.

Metadata

Item Type:	Proceedings Paper
Authors/Creators:	Luo, P. Madathil, S.N.E. https://orcid.org/0000-0001-6832-1300 de Souza, P.
Copyright, Publisher and Additional Information:	© 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy.
Keywords:	IGBT; Clustered IGBT; field-stop technology; dynamic avalanche; dV/dt controllability
Dates:	Published: 13 July 2021 Published (online): 13 July 2021
Institution:	The University of Sheffield
Academic Units:	The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User:	Symplectic Sheffield
Date Deposited:	29 Nov 2022 11:53
Last Modified:	29 Nov 2022 16:38
Status:	Published
Publisher:	IEEE
Refereed:	Yes
Identification Number:	10.1109/ecce-asia49820.2021.9479243
Related URLs:	Author Conference
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:193818

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Experimental Demonstration of a 1.2-kV Trench Clustered Insulated Gate Bipolar Transistor in Field-Stop Technology

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