Avrutin, Evgeny orcid.org/0000-0001-5488-3222 and Ryvkin, B.S. (2022) Semiconductor laser design with an asymmetric large optical cavity waveguide and a bulk active layer near p-cladding for efficient high-power red light emission. Semiconductor science and technology. 125002. ISSN 0268-1242
Abstract
A semiconductor laser design for efficient, high power, high brightness red light emission is proposed, using a large optical cavity asymmetric waveguide and a bulk active layer (AL) positioned very close to the p-cladding. The low threshold carrier density associated with the broad AL, as well as the proximity of the AL to the p-cladding, ensure that the electron leakage current, the major detrimental factor in red lasers, stays modest in a broad range of excitation levels. This in turn promises high-power, efficient operation.
Metadata
Item Type: | Article |
---|---|
Authors/Creators: |
|
Copyright, Publisher and Additional Information: | © 2022 The Author(s). |
Dates: |
|
Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Electronic Engineering (York) |
Depositing User: | Pure (York) |
Date Deposited: | 09 Nov 2022 13:20 |
Last Modified: | 12 Jan 2025 00:09 |
Published Version: | https://doi.org/10.1088/1361-6641/ac985a |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1088/1361-6641/ac985a |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:193183 |
Download
Filename: Avrutin_2022_Semicond._Sci._Technol._37_125002.pdf
Description: Semiconductor laser design with an asymmetric large optical cavity waveguide and a bulk active layer near p-cladding for efficient high-power red light emission
Licence: CC-BY 2.5