Jindal, G, Watkins, GT, Morris, K orcid.org/0000-0002-0090-9121 et al. (1 more author) (2022) Digital Predistortion of RF Power Amplifiers Robust to a Wide Temperature Range and Varying Peak-to-Average Ratio Signals. IEEE Transactions on Microwave Theory and Techniques, 70 (7). pp. 3675-3687. ISSN 0018-9480
Abstract
In this work, a digital predistortion (DPD) model for the linearization of RF power amplifiers (PAs) is presented. The model provides a linearized gain (DPD + PA) independent of the instantaneous transistor channel temperature within a predefined temperature window. Channel temperature variations due to varying ambient temperatures or changes in the signal probability density function (PDF) cause long-term memory effects, which results in dispersed (dynamic) AM/AM and AM/PM characteristics. The presented model is used to compensate for the memory effects due to self-heating and external temperature changes by estimating the transistor channel temperature through a linear single-pole Foster thermal network. The DPD model uses a first-order Taylor approximation to cancel out temperature-based nonlinearities. Gaussian pulses are used to extract the PA intrapulse gain at different temperatures without being affected by the signal PDF, thus allowing temperature- and signal-independent PA characterization. The model is validated from 20 ∘C to 80 ∘C and by considering a class-B 3.75-GHz 10-W gallium nitride (GaN)-on-SiC PA. The DPD performance is evaluated by considering the normalized root-mean-squared error (NRMSE), the output spectra, and adjacent channel power ratio (ACPR) with and without DPD for multiple signals bandwidths and peak-to-average power ratio (PAPR) and finally compared with other approaches.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
Keywords: | Behavioral modeling , digital predistortion (DPD) , gallium nitride (GaN) , linearization , memory effects , RF~power amplifier (PA) , temperature degradation , thermal effects |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 02 Nov 2022 16:43 |
Last Modified: | 25 Jun 2023 23:08 |
Status: | Published |
Publisher: | IEEE |
Identification Number: | 10.1109/tmtt.2022.3175155 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:192792 |