Evaluation of drain-source voltage in switch transient time intervals as gate oxide degradation precursor of SiC power MOSFETs

Naghibi, J., Mohsenzade, S., Mehran, K. et al. (1 more author) (2022) Evaluation of drain-source voltage in switch transient time intervals as gate oxide degradation precursor of SiC power MOSFETs. In: Proceedings of 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe). 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), 05-09 Sep 2022, Hanover, Germany. IEEE , Hannover, Germany ISBN 9781665487009

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Item Type: Proceedings Paper
Authors/Creators:
Copyright, Publisher and Additional Information:

© 2022 European Power Electronics and Drives Association & the Institute of Electrical and Electronics Engineers (IEEE)
Keywords: Degradation; MOSFET; Reliability; Silicon Carbide (SiC)
Dates:
  • Published: 17 October 2022
  • Published (online): 17 October 2022
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Depositing User: Symplectic Sheffield
Date Deposited: 09 Nov 2022 15:39
Last Modified: 09 Nov 2022 15:39
Published Version: https://ieeexplore.ieee.org/document/9907189
Status: Published
Publisher: IEEE
Refereed: Yes
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