Naghibi, J., Mohsenzade, S., Mehran, K. et al. (1 more author) (2023) Gate oxide degradation condition monitoring technique for high-frequency applications of silicon carbide power MOSFETs. IEEE Transactions on Power Electronics, 38 (1). pp. 1079-1091. ISSN 0885-8993
Abstract
Gate oxide degradation, which considerably affects turn- on /- off dynamics of the switch, embraces a large percentage of chip-related failure modes both in silicon and silicon carbide power MOSFETs. The gate oxide layer is thinner in silicon carbide power MOSFETs in comparison to their silicon-based counterparts. Consequently, the problem of gate oxide degradation has become a more crucial impediment in achieving reliable performance in silicon carbide power MOSFETs. This problem is even more severe in high-frequency applications due to higher EMI signature and complicated and costly measurement. In this article, a reliable fully analog cost-effective gate oxide degradation condition monitoring technique is proposed and validated. High-order harmonics magnitudes of drain–source voltage are used to produce a dc signal as the aging precursor of the gate oxide region. Using a dedicated degradation setup, the credibility of the developed condition monitoring technique was examined at different rates of gate oxide degradation for 650-V/22-A silicon carbide discrete MOSFET. In 200-kHz, 217-V switch operation, the proposed precursor showed 68% change in comparison to its initial value. This brings a high-resolution assessment on the reliability level of the switch gate oxide region.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2022 IEEE. |
Keywords: | Condition monitoring (CM); frequency spectrum; gate oxide degradation; reliability; wide bandgap |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 01 Nov 2022 18:31 |
Last Modified: | 01 Nov 2022 18:31 |
Status: | Published |
Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
Refereed: | Yes |
Identification Number: | 10.1109/tpel.2022.3198291 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:192700 |