Control of morphology and substrate etching in InAs/InP droplet epitaxy quantum dots for single and entangled photon emitters

Gajjela, R.S.R., Sala, E.M. orcid.org/0000-0001-8116-8830, Heffernan, J. orcid.org/0000-0002-7528-3207 et al. (1 more author) (2022) Control of morphology and substrate etching in InAs/InP droplet epitaxy quantum dots for single and entangled photon emitters. ACS Applied Nano Materials, 5 (6). pp. 8070-8079. ISSN 2574-0970

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Item Type: Article
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© 2022 The Authors. Published by American Chemical Society. This is an Open Access article distributed under the terms of the Creative Commons Attribution Licence (http://creativecommons.org/licenses/by/4.0)

Keywords: InAs/InP quantum dots; droplet epitaxy; substrate etching; X-STM; InAs etch pits
Dates:
  • Published: 24 June 2022
  • Published (online): 30 May 2022
  • Accepted: 16 May 2022
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
Funder
Grant number
EUROPEAN COMMISSION - HORIZON 2020
721394
Engineering and Physical Sciences Research Council
EP/N00762X/1
Depositing User: Symplectic Sheffield
Date Deposited: 27 Sep 2022 15:29
Last Modified: 27 Sep 2022 15:29
Status: Published
Publisher: American Chemical Society (ACS)
Refereed: Yes
Identification Number: 10.1021/acsanm.2c01197
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