Fabrication of semi-polar (11-22) GaN V-groove MOSFET using wet etching trench opening technique

Yin, Y., Pinchbeck, J., O'Regan, C. et al. (3 more authors) (2022) Fabrication of semi-polar (11-22) GaN V-groove MOSFET using wet etching trench opening technique. IEEE Electron Device Letters, 43 (10). pp. 1641-1644. ISSN 0741-3106

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Item Type: Article
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© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy.
Keywords: Crystallographic etching; Semi-polar gallium nitride; GaN vertical transistors; V-groove MOSFET
Dates:
  • Published: October 2022
  • Published (online): 1 September 2022
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
Funder
Grant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL
EP/T013001/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL
EP/P006973/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL
EP/P006973/1
Depositing User: Symplectic Sheffield
Date Deposited: 05 Sep 2022 16:07
Last Modified: 01 Sep 2023 00:13
Status: Published
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Refereed: Yes
Identification Number: 10.1109/led.2022.3203633
Open Archives Initiative ID (OAI ID):

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