A thermally erasable silicon oxide layer for molecular beam epitaxy

Hou, Y, Jia, H, Tang, M et al. (8 more authors) (2022) A thermally erasable silicon oxide layer for molecular beam epitaxy. Journal of Physics D: Applied Physics, 55 (42). 424004. ISSN 0022-3727

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Item Type: Article
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© 2022 The Author(s). Published by IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.

Keywords: MBE oxidation; deoxidation; Ge; Si
Dates:
  • Published: 20 October 2022
  • Published (online): 19 August 2022
  • Accepted: 2 August 2022
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Chemical & Process Engineering (Leeds)
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Grant number
EPSRC (Engineering and Physical Sciences Research Council)
EP/W021080/1
Depositing User: Symplectic Publications
Date Deposited: 07 Sep 2022 10:07
Last Modified: 07 Sep 2022 10:07
Status: Published
Publisher: Institute of Physics Publishing
Identification Number: 10.1088/1361-6463/ac8600
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