A comparison study of InGaN/GaN multiple quantum wells grown on (111) silicon and (0001) sapphire substrates under identical conditions

Zhu, C., Xu, C., Feng, P. et al. (4 more authors) (2022) A comparison study of InGaN/GaN multiple quantum wells grown on (111) silicon and (0001) sapphire substrates under identical conditions. Journal of Physics D: Applied Physics, 55 (44). 444003. ISSN 0022-3727

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Item Type: Article
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© 2022 The Author(s). Published by IOP Publishing Ltd. Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. (http://creativecommons.org/licenses/by/4.0/) Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.

Keywords: InGaN/GaN quantum well; substrate; sapphire; silicon; strain
Dates:
  • Published: 3 November 2022
  • Published (online): 9 September 2022
  • Accepted: 30 August 2022
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
Funder
Grant number
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL
EP/M015181/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL
EP/P006361/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL
EP/P006973/1
ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL
EP/T013001/1
Engineering and Physical Sciences Research Council
EP/W003244/1
Depositing User: Symplectic Sheffield
Date Deposited: 09 Sep 2022 14:52
Last Modified: 09 Sep 2022 14:52
Status: Published
Publisher: IOP Publishing
Refereed: Yes
Identification Number: 10.1088/1361-6463/ac8da4
Open Archives Initiative ID (OAI ID):

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