Esendag, V. orcid.org/0000-0002-4483-8759, Feng, P., Zhu, C. et al. (3 more authors) (2022) Influence of a two-dimensional growth mode on electrical properties of the GaN buffer in an AlGaN/GaN high electron mobility transistor. Materials, 15 (17). 6043. ISSN 1996-1944
Abstract
An extensive study has been conducted on a series of AlGaN/GaN high electron mobility transistor (HEMT) samples using metalorganic vapour phase epitaxy, to investigate the influence of growth modes for GaN buffer layers on device performance. The unintentional doping concentration and screw dislocation density are significantly lower in the samples grown with our special two-dimensional (2D) growth approach, compared to a widely-used two-step method combining the 2D and 3D growth. The GaN buffer layers grown by the 2D growth approach have achieved an unintentional doping density of 2 × 1014 cm−3, two orders lower than 1016 cm−3 of the GaN samples grown using a conventional two-step method. High-frequency capacitance measurements show that the samples with lower unintentional doping densities have lower buffer leakage and higher breakdown limits. This series of samples have attained sub-nA/mm leakages, a high breakdown limit of 2.5 MV/cm, and a saturation current density of about 1.1 A/mm. It indicates that our special 2D growth approach can effectively lessen the unintentional doping in GaN buffer layers, leading to low buffer leakage and high breakdown limits of GaN/AlGaN HEMTs.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
Keywords: | unintentional doping; dislocations; GaN; AlGaN; electrical characterisation; capacitance-voltage; electrical breakdown |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL EP/T013001/1 Engineering and Physical Sciences Research Council EP/W003244/1 ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL EP/P006973/1 ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL EP/M015181/1 ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL EP/P006361/1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 09 Sep 2022 14:06 |
Last Modified: | 09 Sep 2022 14:14 |
Status: | Published |
Publisher: | MDPI AG |
Refereed: | Yes |
Identification Number: | 10.3390/ma15176043 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:190632 |