Osman, T., Lim, L.W., Ng, J.S. orcid.org/0000-0002-1064-0410 et al. (1 more author) (2022) Fabrication of infrared linear arrays of InAs planar avalanche photodiodes. Optics Express, 30 (12). p. 21758.
Abstract
We report a, to the best of our knowledge, new device fabrication process for 128-pixel linear arrays of InAs planar avalanche photodiodes, utilizing selective area implantation of Beryllium ions into epitaxially-grown InAs wafers. The pixels exhibited uniform avalanche gain and responsivity. Room temperature responsivity values at 1550 and 2004 nm wavelengths are 0.49 ± 0.017 and 0.89 ± 0.024 A/W, respectively. Reverse dark current-voltage and avalanche gain measurements were carried out at different temperatures (from room temperature to 150 K). At 200 K at −15 V reverse bias, the pixels exhibited an avalanche gain of 22.5 ± 1.18 and dark current density of 0.68 ± 0.48 A/cm2.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2022 Published by Optica Publishing Group under the terms of the Creative Commons Attribution 4.0 License (http://creativecommons.org/licenses/by/4.0/). Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number Engineering and Physical Sciences Research Council 2294116 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 08 Sep 2022 13:14 |
Last Modified: | 08 Sep 2022 13:14 |
Status: | Published |
Publisher: | Optica Publishing Group |
Refereed: | Yes |
Identification Number: | 10.1364/oe.460017 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:190539 |