Two‐inch wafer‐scale exfoliation of hexagonal boron nitride films fabricated by RF‐sputtering

A film stripping method that allows for liquid phase exfoliation assisted by spin coating polymethyl methacrylate has been investigated, resulting in a two-inch hexagonal boron nitride (hBN) film to be fully stripped and then transferred. A number of key factors that can influence the stripping and the transferring process of the films grown by sputtering have been systematically analyzed, including different solutions, different concentration of solution and different thickness of films. The morphology and properties of the hBN films before and after stripping have been characterized. The band edge absorption peak of the transferred film is 229 nm and the corresponding optical band gap is 5.50 eV. Such transferred hBN films have been fabricated into transparent resistive switching devices on indium-tin-oxide glass, demonstrating a constant resistance window of ≈102 even under different applied voltages. This work systematically studies the stripping process, characterizes the transferred films, and explores the application in the field of resistance switching, which lay a foundation for the further application of hBN materials in optoelectronic devices.