Xu, Y.B., Tselepi, M., Guertler, C.M. et al. (5 more authors) (2001) Giant enhancement of orbital moments and perpendicular anisotropy in epitaxial Fe/GaAs(100). Journal of Applied Physics, 89 (11). pp. 7156-7158. ISSN 1089-7550
Abstract
The spin and orbital magnetic moments and the perpendicular magnetic anisotropy of 8 and 33 monolayer epitaxial bcc Fe films grown on GaAs(100)-4×6 have been measured using x-ray magnetic circular dichronism and polar magneto-optical Kerr effect. Both the films have approximately the same spin moments of about 2.0µB close to that of the bulk value. The ultrathin film shows a giant orbital moment enhancement of about 300% with respect to the bulk value and a perpendicular interface anisotropy field H/s(Fe-GaAs) of the order of –5×10(4) Oe. This may be partially due to an increased degree of localization of electronic states at the Fe/GaAs interface associated with the atomic scale interface structure. © 2001 American Institute of Physics.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2001 American Institute of Physics. Available from the author's web site (Associated URL field). |
Keywords: | |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Electronic Engineering (York) |
Depositing User: | Repository Officer |
Date Deposited: | 08 Jan 2007 |
Last Modified: | 05 Aug 2007 18:25 |
Published Version: | http://dx.doi.org/10.1063/1.1359473 |
Status: | Published |
Publisher: | American Institute of Physics |
Refereed: | Yes |
Identification Number: | 10.1063/1.1359473 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:1889 |