Patterning ferromagnetism in Ni80Fe20 films via Ga+ ion irradiation

We demonstrate that focused Ga+ ion irradiation can comprehensively modify the ferromagnetic properties of Ni80Fe20 thin films. Magneto-optic Kerr effect measurements at room temperature and magnetoresistance measurements at temperatures between 1.5 and 270 K characterized the irradiation effects. Irradiation steadily reduced the films' room temperature coercivity, and a dose of 1.0×10(16) ions/cm(2) at 30 keV was found sufficient to cause a loss of ferromagnetism at room temperature in films of thickness up to 15.5 nm. In situ end-point detection and postirradiation atomic force microscopy confirmed that the sputtering which accompanied doses up to 1.0×10(16) ions/cm(2) did not compromise the protective caps on these Ni80Fe20 films. We therefore conclude that the modification of ferromagnetic properties occurred primarily because of direct Ga+ ion implantation. From these results, we speculate that focused Ga+ ion irradiation could be a convenient tool for the nanoscale patterning of magnetic properties in 3d transition metal thin films. © 2001 American Institute of Physics.