Tensile-strained direct bandgap GeSnOI micro/nanostructures by harnessing residual strain

Burt, D, Zhang, L, Joo, H-J et al. (7 more authors) (2022) Tensile-strained direct bandgap GeSnOI micro/nanostructures by harnessing residual strain. In: Proceedings of Silicon Photonics XVII. Silicon Photonics XVII, 22 Jan - 28 Feb 2022, San Francisco, California, United States. SPIE ISBN: 9781510648838 ISSN: 0277-786X EISSN: 1996-756X

Metadata

Item Type: Proceedings Paper
Authors/Creators:
  • Burt, D
  • Zhang, L
  • Joo, H-J
  • Son, B
  • Kim, Y
  • Jung, Y
  • Chen, M
  • Fan, W
  • Tan, CS
  • Nam, D
Dates:
  • Published: 5 March 2022
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 04 Jul 2022 15:15
Last Modified: 04 Jul 2022 15:15
Status: Published
Publisher: SPIE
Identification Number: 10.1117/12.2608742
Open Archives Initiative ID (OAI ID):

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