A GaAsSb/AlGaAsSb avalanche photodiode with a very small temperature coefficient of breakdown voltage

Abstract

Avalanche photodiodes (APDs) made with the material AlGaAsSb (lattice-matched to InP) exhibit very low excess noise characteristics. We demonstrate a Separate Absorption and Multiplication APD (SAM-APD) incorporating a GaAs0.52Sb0.48 (GaAsSb) absorption region and an Al0.85Ga0.15As0.56Sb0.44 (AlGaAsSb) avalanche region. Our GaAsSb/AlGaAsSb SAM-APD exhibits a cut-off wavelength of 1.70 m at room temperature and a responsivity of 0.39 A/W at 1.55 m wavelength (with no antireflection coating). Temperature dependence of the breakdown voltage was obtained from avalanche gain data from multiple devices operated at 77 to 295 K. This produced a temperature coefficient of breakdown voltage of 4.310.33 mV/K, a factor of 10 and 5 smaller than values for comparable InP and InAlAs SAM-APDs. The very small temperature coefficient of this work is consistent with the extremely weak temperature dependence of avalanche breakdown previously observed in AlGaAsSb diodes.

Metadata

Item Type:	Article
Authors/Creators:	Cao, Y. https://orcid.org/0000-0002-6353-7660 Osman, T. Clarke, E. https://orcid.org/0000-0002-8287-0282 Patil, P.K. Ng, J.S. https://orcid.org/0000-0002-1064-0410 Tan, C.H.
Copyright, Publisher and Additional Information:	© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works. Reproduced in accordance with the publisher's self-archiving policy.
Keywords:	Avalanche photodiode (APD); avalanche breakdown; AlGaAsSb; GaAsSb; impact ionization; Separate Absorption and Multiplication Avalanche Photodiode (SAM-APD); temperature coefficient
Dates:	Published: 15 July 2022 Published (online): 13 April 2022
Institution:	The University of Sheffield
Academic Units:	The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:	Funder Grant number ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL EP/K001469/1 ENGINEERING AND PHYSICAL SCIENCE RESEARCH COUNCIL EP/N020715/1
Depositing User:	Symplectic Sheffield
Date Deposited:	20 Apr 2022 13:24
Last Modified:	13 Apr 2023 00:13
Status:	Published
Publisher:	Institute of Electrical and Electronics Engineers (IEEE)
Refereed:	Yes
Identification Number:	10.1109/jlt.2022.3167268
Related URLs:	Dataset
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:185805