Simanjuntak, Firman Mangasa, Panidi, Julianna, Talbi, Fayzah et al. (3 more authors) (2022) Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices. APL Materials. 031103. ISSN 2166-532X
Abstract
The insertion of a metal layer between an active electrode and a switching layer leads to the formation of a ternary oxide at the interface. The properties of this self-formed oxide are found to be dependent on the Gibbs free energy of oxide formation of the metal (ΔGf°). We investigated the role of various ternary oxides in the switching behavior of conductive bridge random access memory (CBRAM) devices. The ternary oxide acts as a barrier layer that can limit the mobility of metal cations in the cell, promoting stable switching. However, too low (higher negative value) ΔGf° leads to severe trade-offs; the devices require high operation current and voltages to exhibit switching behavior and low memory window (on/off) ratio. We propose that choosing a metal layer having appropriate ΔGf° is crucial in achieving reliable CBRAM devices.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | Funding Information: The authors acknowledge the support from the EPSRC program grant (Grant No. EP/R024642/1), the H2020-FETPROACT-2018-01 SYNCH project, and MSCA EC Grant Agreement No. 224 No. 101029535–MENESIS. Publisher Copyright: © 2022 Author(s). |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Physics (York) |
Depositing User: | Pure (York) |
Date Deposited: | 01 Apr 2022 11:00 |
Last Modified: | 21 Jan 2025 18:02 |
Published Version: | https://doi.org/10.1063/5.0076903 |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1063/5.0076903 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:185374 |
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Description: Formation of a ternary oxide barrier layer and its role in switching characteristic of ZnO-based conductive bridge random access memory devices
Licence: CC-BY 2.5