XPS and XMCD study of Fe3O4/GaAs interface

Abstract

Ultrathin Fe oxide films of various thicknesses prepared by post-growth oxidation on GaAs(100) surface have been investigated with X-ray photoelectron spectroscopy (NPS), X-ray absorption spectroscopy (XAS), and X-ray magnetic circular dichroism (XMCD). The XPS confirms that the surfaces of the oxide are Fe3O4 rather than Fe2O3. XAS and XMCD measurements indicate the presence of nsulating Fe divalent oxide phases (FeO) beneath the surface Fe-3 O-4 layer with the sample thickness above 4 mn. This FeO might act as a barrier for the spin injection into the GaAs.

Metadata

Item Type:	Article
Authors/Creators:	Lu, Y X Claydon, J S Ahmad, E Xu, Y B https://orcid.org/0000-0002-7823-0725 Thompson, S M https://orcid.org/0000-0002-3996-8081 Wilson, Karen van der Laan, G
Copyright, Publisher and Additional Information:	© 2005 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Keywords:	half-metallic Fe3O4,post-growth oxidation,spintronics,XMCD,SPIN INJECTION,SEMICONDUCTOR,OXIDATION
Dates:	Published: October 2005
Institution:	The University of York
Academic Units:	The University of York > Faculty of Sciences (York) > Electronic Engineering (York) The University of York > Faculty of Sciences (York) > Physics (York)
Depositing User:	Repository Officer
Date Deposited:	18 Dec 2006
Last Modified:	10 Apr 2025 23:04
Published Version:	https://doi.org/10.1109/TMAG.2005.854834
Status:	Published
Refereed:	Yes
Identification Number:	10.1109/TMAG.2005.854834
Related URLs:	http://dx.doi.org/10.1109/TMAG.2005.8548...
Open Archives Initiative ID (OAI ID):	oai:eprints.whiterose.ac.uk:1846

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XPS and XMCD study of Fe3O4/GaAs interface

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