Vertical field inhomogeneity associated with threading dislocations in GaN high electron mobility transistor epitaxial stacks

Wohlfahrt, M., Uren, M.J., Yin, Y. et al. (2 more authors) (2021) Vertical field inhomogeneity associated with threading dislocations in GaN high electron mobility transistor epitaxial stacks. Applied Physics Letters, 119 (24). 243502. ISSN 0003-6951

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Item Type: Article
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© 2021 The Author(s). This is an author-produced version of a paper subsequently published in Applied Physics Letters. Uploaded in accordance with the publisher's self-archiving policy.

Dates:
  • Published: 13 December 2021
  • Published (online): 14 December 2021
  • Accepted: 2 December 2021
Institution: The University of Sheffield
Academic Units: The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield)
Funding Information:
Funder
Grant number
Engineering and Physical Sciences Research Council
EP/N015878/1
Depositing User: Symplectic Sheffield
Date Deposited: 22 Feb 2022 13:10
Last Modified: 23 Feb 2022 08:24
Status: Published
Publisher: AIP Publishing
Refereed: Yes
Identification Number: 10.1063/5.0066346
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