Okujima, M., Yoshikawa, K., Mori, S. et al. (6 more authors) (2021) Molecular beam epitaxial growth of GaAs/GaNAsBi core–multishell nanowires. Applied Physics Express, 14 (11). 115002. ISSN 1882-0778
Abstract
GaAs/GaNAsBi/GaAs core–multishell nanowires were grown using molecular beam epitaxy on Si(111) substrates. The formation of the 20 nm wide GaNAsBi shell with a regular hexagonal structure was observed. The shell is estimated to contain approximately 1.5% N and 2.6% Bi and has a compressive lattice mismatch of less than 0.2% with GaAs layers. The strain mediation by the introduction of both N and Bi suppresses the crystalline deformation, resulting in the clear formation of the GaNAsBi shell. Thus, we obtained room-temperature photoluminescence with the maximum position at approximately 1300 nm from the GaAs/GaNAsBi/GaAs core–multishell nanowires.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2021 IOP Publishing Ltd. This is an author produced version of a paper subsequently published in Applied Physics Express. Uploaded in accordance with the publisher's self-archiving policy. Article available under the terms of the CC-BY-NC-ND licence (https://creativecommons.org/licenses/by-nc-nd/4.0/). |
Keywords: | Nanowire; Molecular Beam Epitaxy; Dilute Nitrides; Dilute Bismides; Telecommunication wavelength |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 12 Jan 2022 10:21 |
Last Modified: | 08 Nov 2022 01:13 |
Status: | Published |
Publisher: | IOP Publishing |
Refereed: | Yes |
Identification Number: | 10.35848/1882-0786/ac32a7 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:182445 |
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