Tang, R., Li, G., Jiang, Y. et al. (7 more authors) (2022) Ga2O3/GaN heterostructural ultraviolet photodetectors with exciton-dominated ultranarrow response. ACS Applied Electronic Materials, 4 (1). pp. 188-196. ISSN 2637-6113
Abstract
Ultraviolet photodetectors have demonstrated a wide range of applications, e.g., missile launching, tracking detection, environmental monitoring, etc. This Article presents an ultraviolet photodetector based on a Ga2O3/GaN heterostructure that is equipped with tunable multiband detectivity via bias voltage and a record ultranarrow response. Particularly, this spectral response can be tuned from ultraviolet-C to ultraviolet-A by modulating the depletion region of the photodetector via adjusting bias. Under a higher bias, a photoresponse with a full-width at half-maximum of ∼4 nm at 363 nm is achieved. This ultranarrow response reaches 2.58 × 103 A/W and an external quantum efficiency of (8.84 × 105)% under 28 V bias. The photoluminescence, photoluminescence excitation, and light-absorption measurements suggest that this ultranarrow-band detectivity can be ascribed to the field-enhanced exciton ionization process in the GaN layer. The high responsivity can be attributed to the internal gain of the photodetector originating from the relatively large valence band offset between the Ga2O3 and GaN layers. This work provides a promising approach to the development of high-performance and versatile multiband ultraviolet photodetectors with electrical tunability. It is also worth highlighting that the features of inexpensive manufacturing and easy scalability are particularly attractive for mass production.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2021 American Chemical Society. |
Keywords: | Ga2O3/GaN heterostructure; ultraviolet photodetector; tunable multiband detectivity; ultrahigh responsivity; exciton-dominated; ultranarrow response |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Funding Information: | Funder Grant number Engineering and Physical Sciences Research Council EP/M015181/1; EP/P006973/1; EP/T013001/1 |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 04 Jan 2022 09:06 |
Last Modified: | 15 Mar 2022 11:54 |
Status: | Published |
Publisher: | American Chemical Society (ACS) |
Refereed: | Yes |
Identification Number: | 10.1021/acsaelm.1c00917 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:181929 |