Kim, Y, Assali, S, Burt, D et al. (6 more authors) (2022) Enhanced GeSn Microdisk Lasers Directly Released on Si. Advanced Optical Materials, 10 (2). 2101213. ISSN 2195-1071
Abstract
GeSn alloys are promising candidates for complementary metal-oxide-semiconductor-compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has recently shown promise in improving the lasing performance. However, the suspended device configuration that is thus far introduced to relax the strain is destined to limit heat dissipation, thus hindering the device performance. Herein is demonstrated that strain-free GeSn microdisk laser devices fully released on Si outperform the canonical suspended devices. This approach allows to simultaneously relax the limiting compressive strain while offering excellent thermal conduction. Optical simulations confirm that, despite a relatively small refractive index contrast between GeSn and Si, optical confinement in strain-free GeSn optical cavities on Si is superior to that in conventional strain-free GeSn cavities suspended in the air. Moreover, thermal simulations indicate a negligible temperature increase in the device. Conversely, the temperature in the suspended devices increases substantially reaching, for instance, 120 K at a base temperature of 75 K under the employed optical pumping conditions. Such improvements enable increasing the operation temperature by ≈40 K and reducing the lasing threshold by 30%. This approach lays the groundwork to implement new designs in the quest for room temperature GeSn lasers on Si.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © Wiley-VCH GmbH. This is an author produced version of a paper published in Advanced Optical Materials. This article may be used for non-commercial purposes in accordance with the Wiley Terms and Conditions for Self-Archiving. |
Keywords: | GeSn; lasers; microdisks; short- and mid-wave infrared optoelectronics; silicon photonics |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 24 Nov 2021 16:54 |
Last Modified: | 21 Nov 2022 01:13 |
Status: | Published |
Publisher: | Wiley |
Identification Number: | 10.1002/adom.202101213 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:180819 |