Joo, H-J, Kim, Y, Burt, D et al. (12 more authors) (2021) 1D photonic crystal direct bandgap GeSn-on-insulator laser. Applied Physics Letters, 119 (20). 201101. ISSN 0003-6951
Abstract
GeSn alloys have been regarded as a potential lasing material for a complementary metal–oxide–semiconductor-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and active areas, which prevent the realization of densely integrated on-chip lasers operating at low power consumption. Here, we present a 1D photonic crystal nanobeam with a very small device footprint of 7 μm2 and a compact active area of ∼1.2 μm2 on a high-quality GeSn-on-insulator substrate. We also report that the improved directness in our strain-free nanobeam lasers leads to a lower threshold density and a higher operating temperature compared to the compressive strained counterparts. The threshold density of the strain-free nanobeam laser is ∼18.2 kW cm−2 at 4 K, which is significantly lower than that of the unreleased nanobeam laser (∼38.4 kW cm−2 at 4 K). Lasing in the strain-free nanobeam device persists up to 90 K, whereas the unreleased nanobeam shows quenching of lasing at a temperature of 70 K. Our demonstration offers an avenue toward developing practical group-IV light sources with high-density integration and low power consumption.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2021 Author(s). This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Hyo-Jun Joo, Youngmin Kim, Daniel Burt, Yongduck Jung, Lin Zhang, Melvina Chen, Samuel Jior Parluhutan, Dong-Ho Kang, Chulwon Lee, Simone Assali, Zoran Ikonic, Oussama Moutanabbir, Yong-Hoon Cho, Chuan Seng Tan, and Donguk Nam , "1D photonic crystal direct bandgap GeSn-on-insulator laser", Appl. Phys. Lett. 119, 201101 (2021) and may be found at https://doi.org/10.1063/5.0066935. Uploaded in accordance with the publisher's self-archiving policy. |
Dates: |
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Institution: | The University of Leeds |
Academic Units: | The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds) |
Depositing User: | Symplectic Publications |
Date Deposited: | 22 Nov 2021 14:30 |
Last Modified: | 15 Nov 2022 01:13 |
Status: | Published |
Publisher: | American Institute of Physics |
Identification Number: | 10.1063/5.0066935 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:180690 |