Love, C. J., Kuerbanjiang, B. orcid.org/0000-0001-6446-8209, Kerrigan, A. et al. (5 more authors) (2021) Substrate dependent reduction of Gilbert damping in annealed Heusler alloy thin films grown on group IV semiconductors. Applied Physics Letters. 172404. ISSN 0003-6951
Abstract
A structural and FMR study is presented for epitaxial thin films of the Heusler alloy Co2FeAl0.5Si0.5 (CFAS) grown on Ge(111) and Si(111) substrates. All films, as-grown and post-annealed, show B2 ordering; full chemical order (L21) is not obtained over the range of anneal temperatures used in this study. As-grown films show a lower Gilbert damping constant, α, when grown on a Si(111) substrate compared to Ge(111). Annealing the films to 450 °C significantly reduces α for CFAS on Ge while increasing α for CFAS on Si. This is related to a substrate dependent competition between improvements in lattice structure and increased interfacial intermixing as a function of anneal temperature. The optimal annealing temperature to minimize α is found to differ by ∼100 K between the two substrates. Above an anneal temperature of 500 °C, films grown on both substrates have increased coercivity, decreased saturation magnetization, and show characteristic two-magnon scattering features.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | Funding Information: This work was partly supported by JSPS KAKENHI (Grant No. 19H05616) and EPSRC under Grant No. EP/K03278X/1. © 2021 Author(s). Uploaded in accordance with the publisher’s self-archiving policy. Further copying may not be permitted; contact the publisher for details |
Dates: |
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Institution: | The University of York |
Academic Units: | The University of York > Faculty of Sciences (York) > Physics (York) |
Funding Information: | Funder Grant number EPSRC EP/T023570/1 |
Depositing User: | Pure (York) |
Date Deposited: | 12 Nov 2021 12:00 |
Last Modified: | 26 Nov 2024 00:51 |
Published Version: | https://doi.org/10.1063/5.0060213 |
Status: | Published |
Refereed: | Yes |
Identification Number: | 10.1063/5.0060213 |
Related URLs: | |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:180314 |
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Description: Substrate dependent reduction of Gilbert damping in annealed Heusler alloy thin films grown on group IV semiconductors