Naghibi, J., Mehran, K. and Foster, M.P. orcid.org/0000-0002-8565-0541 (2021) High-frequency non-invasive magnetic field-based condition monitoring of SiC power MOSFET modules. Energies, 14 (20). 6720.
Abstract
Current distribution anomaly can be used to indicate the onset of package-related failures modes in Silicon Carbide power MOSFET modules. In this paper, we propose to obtain the wire bond’s magnetic field profile using an array of Tunnel Magneto-Resistance (TMR) sensors, and characterise the small changes in the current density distribution to find the onset of the wire bond degradation processes, including wire bond lift-off, wire bond cracking, and wire bond fracture. We propose a novel condition monitoring technique where a non-galvanic high-bandwidth sensing and a reliability model monitor the health of the power switches. We designed a dedicated calibration set-up to examine the sensor array and calibrated to demonstrate the adequate sensitivity to a minimum 5% current anomaly detection in a single wire bond of the switching devices operating with 50 kHz switching frequency. We use a hardware-in-the-loop (HIL) experimental set-up to replicate wire bond-related failures in a 1200 V/55 A SiC MOSFET power module of a DC/DC Boost converter. Signal conditioning circuits are further designed to amplify and buffer the sensor readings. Experimental results showed the proposed technique is able to detect a wide range of package-related failures.
Metadata
Item Type: | Article |
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Authors/Creators: |
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Copyright, Publisher and Additional Information: | © 2021 The Authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
Keywords: | condition monitoring; current distribution; failure onset; magnetic field; reliability; silicon carbide; wire bond |
Dates: |
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Institution: | The University of Sheffield |
Academic Units: | The University of Sheffield > Faculty of Engineering (Sheffield) > Department of Electronic and Electrical Engineering (Sheffield) |
Depositing User: | Symplectic Sheffield |
Date Deposited: | 05 Nov 2021 10:48 |
Last Modified: | 05 Nov 2021 10:48 |
Status: | Published |
Publisher: | MDPI AG |
Refereed: | Yes |
Identification Number: | 10.3390/en14206720 |
Open Archives Initiative ID (OAI ID): | oai:eprints.whiterose.ac.uk:180067 |