Design considerations of intra-step SiGeSn/GeSn quantum well electroabsorption modulators

Ikonic, Z, Chen, Z, Indjin, D et al. (1 more author) (2021) Design considerations of intra-step SiGeSn/GeSn quantum well electroabsorption modulators. Journal of Applied Physics. ISSN 0021-8979

Metadata

Item Type: Article
Authors/Creators:
  • Ikonic, Z
  • Chen, Z
  • Indjin, D
  • Kelsall, R
Copyright, Publisher and Additional Information:

© 2021 Author(s). This is an author produced version of an article published in Journal of Applied Physics. Uploaded in accordance with the publisher's self-archiving policy.
Dates:
  • Published: 20 October 2021
  • Accepted: 30 September 2021
Institution: The University of Leeds
Academic Units: The University of Leeds > Faculty of Engineering & Physical Sciences (Leeds) > School of Electronic & Electrical Engineering (Leeds) > Pollard Institute (Leeds)
Depositing User: Symplectic Publications
Date Deposited: 01 Nov 2021 15:27
Last Modified: 02 Nov 2021 09:43
Status: Published
Publisher: American Institute of Physics
Identification Number: 10.1063/5.0067803
Open Archives Initiative ID (OAI ID):

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